EC‐BIAS‐P High Power Pulsed Bias Network 600 MHz to 5 GHz

Description

The EC-BIAS-P is a high performance bias tee network for pulsed bias applications. This pulsed bias network can be used for transistor characterization test and measurement as well as for pulsed amplifier development. The pulsed bias network has three ports: RF, DC and RF+DC. The RF port passes RF (“AC”), the DC port is used to feed DC, and the RF+DC (“AC+DC”) port presents the combined signal to the device. The EC-BIAS-P can handle DC voltages up to 200 V and DC currents up to 1 A. Therefore, it is suitable for biasing high power transistor devices like GaN HEMTs. The EC-BIAS-P can also be used for static DC biasing.
The EC-BIAS-P’s RF-to-RF+DC path operates from 600 MHz to 5 GHz when considering a maximum insertion loss of 1 dB and minimum return loss of 10 dB. The DC-to-RF and DC-to-RF+DC isolation is > 10dB from 0.817 GHz to 5.0 GHz.
The EC-BIAS-P has excellent DC-to-RF+DC pulse performance exhibiting minimal pulse distortion from pulses with as low as 7 ns rise time. The pulse propagation delay from DC-to-RF+DC is 1.2 ns. The EC-BIAS-P also exhibits minimal distortion for pulsed RF inputs.

Specifications

Parameter	Test Cond.	Val.
Impedance		50 Ohm
Operating Frequency	IL < 1dB	0.60 to 5.0 GHz
VSWR	0.6 to 5 GHz	1.25
Return Loss	0.05 to 5 GHz	10 dB max
	0.711 to 3.925	20 dB max
Insertion loss	0.6 to 5 GHz	0.3 dB
Isolation	0.817 to 5 GHz	10 dB min
	1.888 to 5 GHz	20 dB min
Pulse prop. delay	DC to RF+DC port	1.2 ns
DC port voltage		200 VDC/pulsed
DC port current		1 ADC

 

Data

Type	File	Download
S-parameters	.s2p

Download Data Sheet (PDF)