Description
The EC-BIAS-P is a high performance bias tee network for pulsed bias applications. This pulsed bias network can be used for transistor characterization test and measurement as well as for pulsed amplifier development. The pulsed bias network has three ports: RF, DC and RF+DC. The RF port passes RF (“AC”), the DC port is used to feed DC, and the RF+DC (“AC+DC”) port presents the combined signal to the device. The EC-BIAS-P can handle DC voltages up to 200 V and DC currents up to 1 A. Therefore, it is suitable for biasing high power transistor devices like GaN HEMTs. The EC-BIAS-P can also be used for static DC biasing.
The EC-BIAS-P’s RF-to-RF+DC path operates from 600 MHz to 5 GHz when considering a maximum insertion loss of 1 dB and minimum return loss of 10 dB. The DC-to-RF and DC-to-RF+DC isolation is > 10dB from 0.817 GHz to 5.0 GHz.
The EC-BIAS-P has excellent DC-to-RF+DC pulse performance exhibiting minimal pulse distortion from pulses with as low as 7 ns rise time. The pulse propagation delay from DC-to-RF+DC is 1.2 ns. The EC-BIAS-P also exhibits minimal distortion for pulsed RF inputs.
Specifications
| Parameter | Test Cond. | Val. |
| Impedance | 50 Ohm | |
| Operating Frequency | IL < 1dB | 0.60 to 5.0 GHz |
| VSWR | 0.6 to 5 GHz | 1.25 |
| Return Loss | 0.05 to 5 GHz | 10 dB max |
| 0.711 to 3.925 | 20 dB max | |
| Insertion loss | 0.6 to 5 GHz | 0.3 dB |
| Isolation | 0.817 to 5 GHz | 10 dB min |
| 1.888 to 5 GHz | 20 dB min | |
| Pulse prop. delay | DC to RF+DC port | 1.2 ns |
| DC port voltage | 200 VDC/pulsed | |
| DC port current | 1 ADC |
Data
| Type | File | Download |
| S-parameters | .s2p |  |
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