Description
The EC-BIAS-TM is a high-power, high-voltage, high-current DC bias network (bias tee) for RF transistor biasing applications. This static DC bias network can be used for RF and microwave transistor characterization as well as broadband, low-noise and power amplifier development. The DC bias network has three ports: RF, DC and RF+DC. The RF port accepts RF signals, the DC port accepts DC biases, and the RF+DC port presents the combined signal to the device. The EC-BIAS-TM can handle DC voltages up to 200 V and DC currents up to 4 A. The DC bias network is especially well-suited for biasing high-voltage, high-current RF power devices like GaN HEMT transistors.
The RF-to-RF+DC path operates from 50 MHz to 6 GHz when considering a maximum insertion loss of 1.6 dB and minimum return loss of 13 dB. The DC-to-RF and DC-to-RF+DC isolation is > 27 dB.
Specifications
| Parameter | Test Cond. | Val. |
| Impedance | 50 Ohm | |
| Operating Frequency | IL < 1.6 dB | 0.05 to 6.0 GHz |
| VSWR | 0.05 to 6 GHz | 1.6 |
| Return Loss | 0.05 to 6 GHz | 12 dB max |
| Insertion loss | 0.05 to 6 GHz | 1.6 dB max |
| Isolation | 0.05 to 6 GHz | 27 dB min |
| DC port voltage | 200 VDC | |
| DC port current | 4 ADC |
Data
| Type | File | Download |
| S-parameters | .s2p |  |
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