EC‐BIAS‐T High Power DC Bias Network 50 MHz to 6 GHz

Description

The EC-BIAS-T is a high-power, high-voltage, high-current DC bias network (bias tee) for RF transistor biasing applications.  This static DC bias network can be used for RF and microwave transistor characterization as well as broadband, low-noise and power amplifier development.  The DC bias network has three ports:  RF, DC and RF+DC.  The RF port accepts RF signals, the DC port accepts DC biases, and the RF+DC port presents the combined signal to the device.  The EC-BIAS-T can handle DC voltages up to 200 V and DC currents up to 4 A.  The DC bias network is especially well-suited for biasing high-voltage, high-current RF power devices like GaN HEMT transistors.

The RF-to-RF+DC path operates from 50 MHz to 6 GHz when considering a maximum insertion loss of 1.6 dB and minimum return loss of 10 dB.  The DC-to-RF and DC-to-RF+DC isolation is > 30 dB from 80 MHz to 4.8 GHz.

Specifications

Parameter	Test Cond.	Val.
Impedance		50 Ohm
Operating Frequency	IL < 1.6 dB	0.05 to 6.0 GHz
VSWR	0.05 to 6 GHz	1.4
Return Loss	0.05 to 6 GHz	10 dB max
	0.10 to 4.42	15 dB max
Insertion loss	0.05 to 6 GHz	0.6 dB
Isolation	0.05 to 6 GHz	27 dB min
	0.29 to 3.3 GHz	40 dB min
DC port voltage		200 VDC
DC port current		4 ADC

 

Data

Type	File	Download
S-parameters	.s2p

Download Data Sheet (PDF)