transistor | Echoic RF Store https://store.echoicrf.com/product-tag/transistor/ High Performance RF and Microwave Components Tue, 21 Apr 2026 21:01:59 +0000 en-US hourly 1 https://wordpress.org/?v=6.9.4 https://i0.wp.com/store.echoicrf.com/wp-content/uploads/2021/04/echoic_store_favicon-e1619586934604.png?fit=32%2C32&ssl=1 transistor | Echoic RF Store https://store.echoicrf.com/product-tag/transistor/ 32 32 132856500 EC‐BIAS‐TM High Power DC Bias Network 50 MHz to 6 GHz https://store.echoicrf.com/product/ec%e2%80%90bias%e2%80%90tm/ https://store.echoicrf.com/product/ec%e2%80%90bias%e2%80%90tm/#respond Sun, 14 Jul 2024 19:14:46 +0000 https://store.echoicrf.com/?post_type=product&p=1190 The EC-BIAS-T is a high-power, high-voltage, high-current DC bias network (bias tee) for RF transistor biasing applications.  This static DC bias network can be used for RF and microwave transistor characterization as well as broadband, low-noise and power amplifier development.  The DC bias network has three ports:  RF, DC and RF+DC.  The RF port accepts RF signals, the DC port accepts DC biases, and the RF+DC port presents the combined signal to the device.  The EC-BIAS-T can handle DC voltages up to 200 V and DC currents up to 4 A.  The DC bias network is especially well-suited for biasing high-voltage, high-current RF power devices like GaN HEMT transistors.

Quantities greater than our inventory can be backordered, please contact us.

The post EC‐BIAS‐TM High Power DC Bias Network 50 MHz to 6 GHz appeared first on Echoic RF Store.

]]> The EC-BIAS-TM is a high-power, high-voltage, high-current DC bias network (bias tee) for RF transistor biasing applications. This static DC bias network can be used for RF and microwave transistor characterization as well as broadband, low-noise and power amplifier development. The DC bias network has three ports: RF, DC and RF+DC. The RF port accepts RF signals, the DC port accepts DC biases, and the RF+DC port presents the combined signal to the device. The EC-BIAS-TM can handle DC voltages up to 200 V and DC currents up to 4 A. The DC bias network is especially well-suited for biasing high-voltage, high-current RF power devices like GaN HEMT transistors.

The RF-to-RF+DC path operates from 50 MHz to 6 GHz when considering a maximum insertion loss of 1.6 dB and minimum return loss of 13 dB. The DC-to-RF and DC-to-RF+DC isolation is > 27 dB.

Specifications

Parameter Test Cond. Val.
Impedance 50 Ohm
Operating Frequency IL < 1.6 dB 0.05 to 6.0 GHz
VSWR 0.05 to 6 GHz 1.6
Return Loss 0.05 to 6 GHz 12 dB max
Insertion loss 0.05 to 6 GHz 1.6 dB max
Isolation 0.05 to 6 GHz 27 dB min
DC port voltage 200 VDC
DC port current 4 ADC
RF Power f0 = 2 GHz 20 W (+43 dBm)

 

Data

Type File Download
S-parameters .s2p

Download Data Sheet (PDF)

 

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]]> https://store.echoicrf.com/product/ec%e2%80%90bias%e2%80%90tm/feed/ 0 1190 EC‐BIAS‐P High Power Pulsed Bias Network 600 MHz to 5 GHz https://store.echoicrf.com/product/ec%e2%80%90bias%e2%80%90p/ https://store.echoicrf.com/product/ec%e2%80%90bias%e2%80%90p/#respond Mon, 14 Dec 2020 05:50:46 +0000 http://store.echoicrf.com/?post_type=product&p=918 The EC-BIAS-P is a high performance bias tee network for pulsed bias applications.  This pulsed bias network can be used for transistor characterization test and measurement as well as for pulsed amplifier development.  The pulsed bias network has three ports:  RF, DC and RF+DC.  The RF port passes RF (“AC”), the DC port is used to feed DC, and the RF+DC (“AC+DC”) port presents the combined signal to the device.  The EC-BIAS-P can handle DC voltages up to 200V and DC currents up to 1A.  Therefore, it is suitable for biasing high power transistor devices like GaN HEMTs.  The EC-BIAS-P can also be used for static DC biasing.

Quantities greater than our inventory can be backordered, please contact us.

The post EC‐BIAS‐P High Power Pulsed Bias Network 600 MHz to 5 GHz appeared first on Echoic RF Store.

]]> The EC-BIAS-P is a high performance bias tee network for pulsed bias applications. This pulsed bias network can be used for transistor characterization test and measurement as well as for pulsed amplifier development. The pulsed bias network has three ports: RF, DC and RF+DC. The RF port passes RF (“AC”), the DC port is used to feed DC, and the RF+DC (“AC+DC”) port presents the combined signal to the device. The EC-BIAS-P can handle DC voltages up to 200 V and DC currents up to 1 A. Therefore, it is suitable for biasing high power transistor devices like GaN HEMTs. The EC-BIAS-P can also be used for static DC biasing.
The EC-BIAS-P’s RF-to-RF+DC path operates from 600 MHz to 5 GHz when considering a maximum insertion loss of 1 dB and minimum return loss of 10 dB. The DC-to-RF and DC-to-RF+DC isolation is > 10dB from 0.817 GHz to 5.0 GHz.
The EC-BIAS-P has excellent DC-to-RF+DC pulse performance exhibiting minimal pulse distortion from pulses with as low as 7 ns rise time. The pulse propagation delay from DC-to-RF+DC is 1.2 ns. The EC-BIAS-P also exhibits minimal distortion for pulsed RF inputs.

Specifications

Parameter Test Cond. Val.
Impedance 50 Ohm
Operating Frequency IL < 1dB 0.60 to 5.0 GHz
VSWR 0.6 to 5 GHz 1.25
Return Loss 0.05 to 5 GHz 10 dB max
0.711 to 3.925 20 dB max
Insertion loss 0.6 to 5 GHz 0.3 dB
Isolation 0.817 to 5 GHz 10 dB min
1.888 to 5 GHz 20 dB min
Pulse prop. delay DC to RF+DC port 1.2 ns
DC port voltage 200 VDC/pulsed
DC port current 1 ADC

 

Data

Type File Download
S-parameters .s2p

Download Data Sheet (PDF)

 

The post EC‐BIAS‐P High Power Pulsed Bias Network 600 MHz to 5 GHz appeared first on Echoic RF Store.

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